SQ3426EEV-T1-GE3
- Mfr.Part #
- SQ3426EEV-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7A 6TSOP
- Stock
- 37,863
- In Stock :
- 37,863
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Rise Time :
- 12ns
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Resistance :
- 63mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 5W
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Pin Count :
- 6
- Drain Current-Max (Abs) (ID) :
- 4A
- Threshold Voltage :
- 1.5V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 30V
- Published :
- 2013
- REACH SVHC :
- Unknown
- Drain to Source Breakdown Voltage :
- 60V
- Series :
- TrenchFET®
- Continuous Drain Current (ID) :
- 7A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 5A, 10V
- Number of Terminations :
- 6
- Lead Free :
- Lead Free
- Number of Pins :
- 6
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 7 ns
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 19 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175°C
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 9 ns
- Packaging :
- Digi-Reel®
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 5W
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- ESD Protection
- Datasheets
- SQ3426EEV-T1-GE3
N-Channel Digi-Reel® 42m Ω @ 5A, 10V 700pF @ 30V 12nC @ 4.5V SOT-23-6 Thin, TSOT-23-6
SQ3426EEV-T1-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 700pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 7A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.4A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 19 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.5V is the threshold voltage at which an electrical device activates any of its operations.
SQ3426EEV-T1-GE3 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 19 ns
a threshold voltage of 1.5V
SQ3426EEV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SQ3426EEV-T1-GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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