SQ1922EEH-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

12V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

350m Ω @ 400mA, 4.5V

Published :

2018

JESD-30 Code :

R-PDSO-G6

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Turn-Off Delay Time :

15 ns

Terminal Form :

Gull wing

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

1.5W

Drain Current-Max (Abs) (ID) :

0.84A

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

Transistor Element Material :

SILICON

Number of Channels :

2

Drain to Source Breakdown Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Package / Case :

6-TSSOP, SC-88, SOT-363

FET Feature :

Standard

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Max Junction Temperature (Tj) :

175°C

Mounting Type :

Surface Mount

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

840mA Tc

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.6Ohm

Continuous Drain Current (ID) :

840mA

Series :

Automotive, AEC-Q101, TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.1mm

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown