SQ1912EH-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

DS Breakdown Voltage-Min :

20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

0.8A

Mounting Type :

Surface Mount

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Series :

Automotive, AEC-Q101, TrenchFET®

FET Feature :

Standard

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

6

JESD-30 Code :

R-PDSO-G6

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.2A, 4.5V

Drain-source On Resistance-Max :

0.28Ohm

Power - Max :

1.5W

RoHS Status :

ROHS3 Compliant

Feedback Cap-Max (Crss) :

12 pF

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

1.15nC @ 4.5V

FET Type :

2 N-Channel (Dual)

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR