SPW17N80C3A
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- Mfr.Part #
- SPW17N80C3A
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 17A TO247-3
- Stock
- 1,994
- In Stock ：
- 1,994
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 11A, 10V
- Lead Free :
- Lead Free
- Published :
- 2003
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Rise Time :
- 15ns
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 17A
- Pulsed Drain Current-Max (IDM) :
- 51A
- Fall Time (Typ) :
- 6 ns
- Current Rating :
- 17A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2320pF @ 25V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 800V
- Drain-source On Resistance-Max :
- 0.29Ohm
- FET Type :
- N-Channel
- Series :
- CoolMOS™
- Power Dissipation :
- 208W
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 800V
- Package / Case :
- TO-247-3
- Turn-Off Delay Time :
- 72 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 227W Tc
- Vgs(th) (Max) @ Id :
- 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 177nC @ 10V
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Datasheets
- SPW17N80C3A
N-Channel Tube 290m Ω @ 11A, 10V ±20V 2320pF @ 25V 177nC @ 10V TO-247-3
SPW17N80C3A Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 670 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2320pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 72 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 51A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
SPW17N80C3A Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 51A.
SPW17N80C3A Applications
There are a lot of Infineon Technologies
SPW17N80C3A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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