SPW11N60C3

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Mfr.Part #
SPW11N60C3
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
7,369
In Stock :
7,369

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
DS Breakdown Voltage-Min :
600V
RoHS Status :
RoHS Compliant
Package / Case :
TO-247-3
Pin Count :
3
Terminal Position :
Single
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Surface Mount :
No
JESD-609 Code :
e3
Avalanche Energy Rating (Eas) :
340 mJ
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-247AD
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
11A
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
380m Ω @ 7A, 10V
Vgs (Max) :
±20V
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.38Ohm
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Pulsed Drain Current-Max (IDM) :
33A
Number of Elements :
1
Vgs(th) (Max) @ Id :
3.9V @ 500µA
Drain to Source Voltage (Vdss) :
650V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Compliant
Power Dissipation-Max :
125W Tc
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
Published :
2005
Terminal Finish :
Tin (Sn)
Series :
CoolMOS™
Datasheets
SPW11N60C3
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPW11N60C3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, SPW11N60C3 pinout, SPW11N60C3 datasheet PDF, SPW11N60C3 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPW11N60C3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPW11N60C3


N-Channel Tube 380m Ω @ 7A, 10V ±20V 1200pF @ 25V 60nC @ 10V 650V TO-247-3

SPW11N60C3FKSA1 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 340 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 11A.Pulsed drain current is maximum rated peak drain current 33A.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

SPW11N60C3FKSA1 Features


the avalanche energy rating (Eas) is 340 mJ
based on its rated peak drain current 33A.
a 650V drain to source voltage (Vdss)


SPW11N60C3FKSA1 Applications


There are a lot of Infineon Technologies
SPW11N60C3FKSA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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