SPW11N60C3
- Mfr.Part #
- SPW11N60C3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 7,369
- In Stock :
- 7,369
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 600V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 340 mJ
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-247AD
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 11A
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 7A, 10V
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.38Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Pulsed Drain Current-Max (IDM) :
- 33A
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3.9V @ 500µA
- Drain to Source Voltage (Vdss) :
- 650V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 125W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Published :
- 2005
- Terminal Finish :
- Tin (Sn)
- Series :
- CoolMOS™
- Datasheets
- SPW11N60C3

N-Channel Tube 380m Ω @ 7A, 10V ±20V 1200pF @ 25V 60nC @ 10V 650V TO-247-3
SPW11N60C3FKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 340 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 11A.Pulsed drain current is maximum rated peak drain current 33A.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SPW11N60C3FKSA1 Features
the avalanche energy rating (Eas) is 340 mJ
based on its rated peak drain current 33A.
a 650V drain to source voltage (Vdss)
SPW11N60C3FKSA1 Applications
There are a lot of Infineon Technologies
SPW11N60C3FKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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