SPW15N60CFDFKSA1
- Mfr.Part #
- SPW15N60CFDFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 13.4A TO247-3
- Stock
- 15,500
- In Stock :
- 15,500
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 5V @ 750µA
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 9.4A, 10V
- Drain-source On Resistance-Max :
- 0.33Ohm
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-247AD
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 650V
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 460 mJ
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 156W Tc
- Pbfree Code :
- yes
- Series :
- CoolMOS™
- Drain Current-Max (Abs) (ID) :
- 13.4A
- Surface Mount :
- No
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 33A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1820pF @ 25V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 13.4A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2008
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Datasheets
- SPW15N60CFDFKSA1

N-Channel Tube 330m Ω @ 9.4A, 10V ±20V 1820pF @ 25V 84nC @ 10V 650V TO-247-3
SPW15N60CFDFKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 460 mJ.The maximum input capacitance of this device is 1820pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 13.4A.There is no pulsed drain current maximum for this device based on its rated peak drain current 33A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
SPW15N60CFDFKSA1 Features
the avalanche energy rating (Eas) is 460 mJ
based on its rated peak drain current 33A.
a 650V drain to source voltage (Vdss)
SPW15N60CFDFKSA1 Applications
There are a lot of Infineon Technologies
SPW15N60CFDFKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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