SPW12N50C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

380m Ω @ 7A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Lead Free :

Lead Free

ECCN Code :

EAR99

Fall Time (Typ) :

8 ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Power Dissipation-Max :

125W Tc

Drain to Source Voltage (Vdss) :

560V

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Turn-Off Delay Time :

45 ns

Pulsed Drain Current-Max (IDM) :

34.8A

Vgs (Max) :

±20V

Radiation Hardening :

No

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Power Dissipation :

125W

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

3.9V @ 500µA

Pin Count :

3

Package / Case :

TO-247-3

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

340 mJ

Max Dual Supply Voltage :

500V

Series :

CoolMOS™

Continuous Drain Current (ID) :

11.6A

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-247AD

Transistor Element Material :

SILICON

Rise Time :

8ns

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.38Ohm

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

11.6A Tc

RoHS Status :

RoHS Compliant

Terminal Position :

Single

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole