SPW15N60C3FKSA1
- Mfr.Part #
- SPW15N60C3FKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 15A TO247-3
- Stock
- 33,622
- In Stock :
- 33,622
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Voltage - Rated DC :
- 650V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 15A
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1660pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 9.4A, 10V
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 15A
- Published :
- 2005
- Series :
- CoolMOS™
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 50 ns
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-247AD
- Max Dual Supply Voltage :
- 600V
- Pin Count :
- 3
- Package / Case :
- TO-247-3
- Pulsed Drain Current-Max (IDM) :
- 45A
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 3.9V @ 675µA
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 460 mJ
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Fall Time (Typ) :
- 5 ns
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.28Ohm
- Power Dissipation :
- 156W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 156W Tc
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Datasheets
- SPW15N60C3FKSA1

N-Channel Tube 280m Ω @ 9.4A, 10V ±20V 1660pF @ 25V 63nC @ 10V TO-247-3
SPW15N60C3FKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 460 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1660pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 45A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 600V.In addition to reducing power consumption, this device uses drive voltage (10V).
SPW15N60C3FKSA1 Features
the avalanche energy rating (Eas) is 460 mJ
a continuous drain current (ID) of 15A
the turn-off delay time is 50 ns
based on its rated peak drain current 45A.
SPW15N60C3FKSA1 Applications
There are a lot of Infineon Technologies
SPW15N60C3FKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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