SPS04N60C3BKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Published :

2005

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

600V

Drain to Source Voltage (Vdss) :

650V

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-251-3 Stub Leads, IPak

Radiation Hardening :

No

Continuous Drain Current (ID) :

4.5A

Pin Count :

3

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Number of Elements :

1

Series :

CoolMOS™

Rise Time :

2.5ns

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

58.5 ns

FET Type :

N-Channel

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Pbfree Code :

yes

Case Connection :

Isolated

Turn On Delay Time :

6 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Power Dissipation :

50W

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Fall Time (Typ) :

9.5 ns

Drain-source On Resistance-Max :

0.95Ohm

Halogen Free :

Not Halogen Free

JESD-609 Code :

e3

Power Dissipation-Max :

50W Tc