SPS04N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Power Dissipation :

50 W

Continuous Drain Current (ID) :

4.5 A

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs (Max) :

±20V

Supplier Device Package :

PG-TO251

Channel Type :

N

RoHS :

Compliant

Max Operating Temperature :

150 °C

REACH SVHC :

Unknown

Drain to Source Resistance :

950 mΩ

Rise Time :

2.5 ns

Turn-On Delay Time :

6 ns

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

490 pF @ 25 V

Continuous Drain Current Id :

4.5

Element Configuration :

Single

Turn-Off Delay Time :

58.5 ns

Nominal Vgs :

3 V

FET Feature :

-

Package :

Bulk

Termination :

Through Hole

Dual Supply Voltage :

650 V

Min Operating Temperature :

-55 °C

Gate to Source Voltage (Vgs) :

20 V

Input Capacitance :

490 pF

Drain to Source Voltage (Vdss) :

600 V

Number of Pins :

3

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation :

50 W

Power Dissipation (Max) :

50W (Tc)

FET Type :

N-Channel

Series :

CoolMOS™

Drain to Source Breakdown Voltage :

650 V

Package / Case :

TO-251-3 Stub Leads, IPak

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

950mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Rds On Max :

950 mΩ

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V