SPS02N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

3 V

Pin Count :

3

Avalanche Energy Rating (Eas) :

50 mJ

FET Type :

N-Channel

Max Dual Supply Voltage :

600V

Packaging :

Tube

Number of Terminations :

3

Number of Elements :

1

Series :

CoolMOS™

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.9V @ 80µA

Power Dissipation-Max :

25W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

3Ohm

Number of Pins :

3

Mounting Type :

Through Hole

Turn-Off Delay Time :

68 ns

Power Dissipation :

25W

Fall Time (Typ) :

12 ns

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Turn On Delay Time :

6 ns

Pbfree Code :

No

RoHS Status :

RoHS Compliant

Element Configuration :

Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.1A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Package / Case :

TO-251-3 Stub Leads, IPak

Published :

2005

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Rise Time :

3ns

Drain to Source Breakdown Voltage :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

650V

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

5.4A

Continuous Drain Current (ID) :

1.8A

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Termination :

Through Hole