SPS03N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

TO-251-3 Stub Leads, IPak

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

100 mJ

Fall Time (Typ) :

12 ns

Series :

CoolMOS™

Termination :

Through Hole

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Pins :

3

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

9.6A

Published :

2006

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

JEDEC-95 Code :

TO-251AA

Turn On Delay Time :

7 ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

3.2A

Turn-Off Delay Time :

64 ns

Rise Time :

3ns

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Max Dual Supply Voltage :

600V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Mounting Type :

Through Hole

Element Configuration :

Single

Nominal Vgs :

3 V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Surface Mount :

No

Power Dissipation-Max :

38W Tc

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

650V

Power Dissipation :

38W

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3.9V @ 135µA

Drain to Source Breakdown Voltage :

650V

REACH SVHC :

Unknown