SPS03N60C3BKMA1
- Mfr.Part #
- SPS03N60C3BKMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Stub Leads, IPak
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 3.2A TO251-3
- Stock
- 34,913
- In Stock :
- 34,913
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A Tc
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-251AA
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 9.6A
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 38W Tc
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 2A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 3.2A
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-251-3 Stub Leads, IPak
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 650V
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Series :
- CoolMOS™
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Vgs(th) (Max) @ Id :
- 3.9V @ 135µA
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Datasheets
- SPS03N60C3BKMA1

N-Channel Tube 1.4 Ω @ 2A, 10V ±20V 400pF @ 25V 17nC @ 10V 650V TO-251-3 Stub Leads, IPak
SPS03N60C3BKMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 400pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 3.2A.There is a peak drain current of 9.6A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
SPS03N60C3BKMA1 Features
the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 9.6A.
a 650V drain to source voltage (Vdss)
SPS03N60C3BKMA1 Applications
There are a lot of Infineon Technologies
SPS03N60C3BKMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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