SPI80N08S2-07R

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

FET Type :

N-Channel

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Published :

2007

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

750 mJ

Number of Terminations :

3

Current Rating :

80A

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300W Tc

Voltage - Rated DC :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

JESD-609 Code :

e3

Terminal Position :

Single

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

5830pF @ 25V

Pulsed Drain Current-Max (IDM) :

320A

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 80A, 10V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Continuous Drain Current (ID) :

80A

Drain-source On Resistance-Max :

0.0073Ohm

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Elements :

1

Packaging :

Tube