SPI80N06S2L-05

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320A

Transistor Element Material :

SILICON

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

7530pF @ 25V

Mount :

Through Hole

Pin Count :

3

Number of Terminations :

3

Voltage - Rated DC :

55V

Drain-source On Resistance-Max :

0.006Ohm

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

80A Tc

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Published :

2003

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

300W Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 80A, 10V

Current Rating :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

80A

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

800 mJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Position :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA