SPI80N06S2-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Pin Count :

3

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

4V @ 180μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0066Ohm

Current Rating :

80A

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 68A, 10V

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

320A

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Power Dissipation-Max :

250W Tc

Avalanche Energy Rating (Eas) :

530 mJ

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Voltage - Rated DC :

55V

FET Type :

N-Channel

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

4540pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Additional Feature :

AVALANCHE RATED

Number of Elements :

1