SPI80N03S2L-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320A

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Terminal Position :

Single

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Current Rating :

80A

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 80A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2530pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

135A

Vgs(th) (Max) @ Id :

2V @ 80μA

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Mount :

Through Hole

Packaging :

Tube

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

30V

Drain-source On Resistance-Max :

0.0095Ohm

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

150W Tc

Number of Terminations :

3

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2003

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

80A

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

240 mJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Lead Free :

Lead Free

JESD-30 Code :

R-PSIP-T3

Pin Count :

3