SPI80N06S-08

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

320A

Surface Mount :

No

Pin Count :

3

Avalanche Energy Rating (Eas) :

700 mJ

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Published :

2005

Series :

SIPMOS®

Drain Current-Max (Abs) (ID) :

80A

Rds On (Max) @ Id, Vgs :

8m Ω @ 80A, 10V

Terminal Position :

Single

ECCN Code :

EAR99

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.008Ohm

Vgs(th) (Max) @ Id :

4V @ 240µA

Power Dissipation-Max :

300W Tc

Vgs (Max) :

±20V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

187nC @ 10V

DS Breakdown Voltage-Min :

55V

Pbfree Code :

No

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3660pF @ 25V