SPD04P10PLGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Dual Supply Voltage :

-100V

Power Dissipation :

38W

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

5 ns

Continuous Drain Current (ID) :

-4.2A

Mounting Type :

Surface Mount

Factory Lead Time :

18 Weeks

Vgs(th) (Max) @ Id :

2V @ 380μA

Number of Elements :

1

Published :

2007

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.85Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

4.6 ns

Operating Temperature :

-55°C~175°C TJ

Halogen Free :

Not Halogen Free

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Drain to Source Breakdown Voltage :

-100V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Terminations :

2

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

18 ns

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Number of Pins :

3

Power Dissipation-Max :

38W Tc

Reach Compliance Code :

not_compliant

Threshold Voltage :

-1.5V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

850m Ω @ 3A, 10V

Lead Free :

Contains Lead

Terminal Position :

Single

Series :

SIPMOS®

Height :

2.35mm

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Rise Time :

5.7ns

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

372pF @ 25V

Avalanche Energy Rating (Eas) :

57 mJ

Pbfree Code :

No

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED