SPB08P06PGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Mount :

Surface Mount

Turn On Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

8.8A

Power Dissipation-Max :

42W Tc

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Series :

SIPMOS®

Factory Lead Time :

12 Weeks

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Turn-Off Delay Time :

48 ns

Drain to Source Voltage (Vdss) :

60V

Current Rating :

-8.8A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Rise Time :

46ns

Number of Terminations :

2

JESD-609 Code :

e3

Vgs (Max) :

±20V

Voltage - Rated DC :

-60V

Published :

2006

Avalanche Energy Rating (Eas) :

70 mJ

Fall Time (Typ) :

14 ns

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

300m Ω @ 6.2A, 10V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

No

Halogen Free :

Halogen Free

Power Dissipation :

42W

Max Dual Supply Voltage :

-60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED