SPB02N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55 °C

Power Dissipation (Max) :

25W (Tc)

Current - Continuous Drain (Id) @ 25°C :

1.8A (Tc)

Power Dissipation :

25 W

Gate to Source Voltage (Vgs) :

20 V

RoHS :

Compliant

Supplier Device Package :

PG-TO263-3-2

Rds On Max :

3 Ω

Max Power Dissipation :

25 W

Product Status :

Active

Technology :

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Max Operating Temperature :

150 °C

Drain to Source Resistance :

3 Ω

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.1A, 10V

Drain to Source Voltage (Vdss) :

650 V

Continuous Drain Current (ID) :

1.8 A

Turn-On Delay Time :

6 ns

Vgs (Max) :

±20V

Rise Time :

3 ns

Drain to Source Breakdown Voltage :

600 V

Input Capacitance :

200 pF

Gate Charge (Qg) (Max) @ Vgs :

12.5 nC @ 10 V

Turn-Off Delay Time :

68 ns

Continuous Drain Current Id :

1.8

Halogen Free :

Halogen Free

Channel Type :

N

Operating Temperature :

-55°C ~ 150°C (TJ)

Voltage Rating (DC) :

650 V

Input Capacitance (Ciss) (Max) @ Vds :

200 pF @ 25 V

Current Rating :

1.8 A

Threshold Voltage :

3 V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Package :

Bulk

Series :

CoolMOS™

FET Feature :

-

Element Configuration :

Single

Number of Pins :

3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.9V @ 80µA

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB