SPB02N60C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

6 ns

Number of Terminations :

2

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Published :

2005

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.9V @ 80µA

Series :

CoolMOS™

Mount :

Surface Mount

Power Dissipation-Max :

25W Tc

Gate to Source Voltage (Vgs) :

20V

Rise Time :

3ns

FET Type :

N-Channel

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Fall Time (Typ) :

12 ns

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

650V

Packaging :

Tape and Reel (TR)

Pin Count :

4

Turn-Off Delay Time :

68 ns

Continuous Drain Current (ID) :

1.8A

Terminal Position :

Single

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

5.4A

Avalanche Energy Rating (Eas) :

50 mJ

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Pbfree Code :

No

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.1A, 10V

Power Dissipation :

25W

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

3Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Dual Supply Voltage :

600V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Lead Free :

Contains Lead

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant