SPB03N60C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

12 ns

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Vgs (Max) :

±20V

Power Dissipation :

38W

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Packaging :

Tape and Reel (TR)

Pbfree Code :

No

ECCN Code :

EAR99

Turn-Off Delay Time :

64 ns

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

7 ns

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3.9V @ 135µA

Rise Time :

3ns

Continuous Drain Current (ID) :

3.2A

Lead Free :

Contains Lead

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

38W Tc

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

650V

Pin Count :

4

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Max Dual Supply Voltage :

600V

Pulsed Drain Current-Max (IDM) :

9.6A

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Published :

2005