SPB02N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

1.8A

Transistor Application :

SWITCHING

Number of Terminals :

2

Drain-source On Resistance-Max :

3Ohm

Additional Feature :

AVALANCHE RATED

Terminal Finish :

NOT SPECIFIED

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

50 mJ

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-263AB

Terminal Position :

Single

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

3.2A

Pin Count :

4

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1