SPB07N60C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Series :

CoolMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2005

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.6Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Elements :

1

FET Type :

N-Channel

Terminal Form :

Gull wing

Pin Count :

4

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

83W Tc

Drain to Source Voltage (Vdss) :

650V

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

21.9A

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Avalanche Energy Rating (Eas) :

230 mJ

Terminal Position :

Single

DS Breakdown Voltage-Min :

600V

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.9V @ 350µA

Packaging :

Tape and Reel (TR)

Pbfree Code :

No

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.6A, 10V

Drain Current-Max (Abs) (ID) :

7.3A

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2