SPB07N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Terminal Position :

Single

Power Dissipation-Max :

83W Tc

Avalanche Energy Rating (Eas) :

230 mJ

Pin Count :

4

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Published :

2005

Drain-source On Resistance-Max :

0.6Ohm

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

650V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Pulsed Drain Current-Max (IDM) :

21.9A

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Drain Current-Max (Abs) (ID) :

7.3A

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Series :

CoolMOS™

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.9V @ 350µA