SPB04N60C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

13.5A

Published :

2005

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

4.5A

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Factory Lead Time :

12 Weeks

Pin Count :

4

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

50W Tc

Series :

CoolMOS™

FET Type :

N-Channel

Transistor Element Material :

SILICON

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

130 mJ

Number of Elements :

1

JESD-609 Code :

e3

Pbfree Code :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

650V

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.95Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V