SPB04N50C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Technology :

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) :

500 V

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Supplier Device Package :

PG-TO263-3-2

FET Feature :

-

Continuous Drain Current Id :

4.5

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

Channel Type :

N

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Series :

CoolMOS™

Package :

Bulk

Power Dissipation (Max) :

50W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

470 pF @ 25 V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

950mOhm @ 2.8A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB