SP8J65TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

29m Ω @ 7A, 10V

Mounting Type :

Surface Mount

FET Type :

2 P-Channel (Dual)

Base Part Number :

*J65

Max Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

7A

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Power - Max :

2W