SP8J3FU6TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Rise Time :

15ns

FET Feature :

Logic Level Gate

Turn On Delay Time :

10 ns

Threshold Voltage :

-2.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

35 ns

Mount :

Surface Mount

Fall Time (Typ) :

10 ns

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

2W

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

3.5A

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 10V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

2 P-Channel (Dual)

Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

90m Ω @ 3.5A, 10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Base Part Number :

*J3

Published :

2006

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount