SP8J1FU6TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

5A

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Dual Supply Voltage :

-30V

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Pins :

8

Base Part Number :

*J1

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

42m Ω @ 5A, 10V

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Termination :

SMD/SMT

Drain Current-Max (Abs) (ID) :

5A

Nominal Vgs :

-2.5 V

Threshold Voltage :

-2.5V

FET Type :

2 P-Channel (Dual)

Factory Lead Time :

17 Weeks

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED