SMUN5113T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Terminal Position :

Dual

Pbfree Code :

yes

Radiation Hardening :

No

Polarity :

PNP

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

47 k Ω

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

202mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Published :

2013

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Transistor Type :

PNP - Pre-Biased

Number of Pins :

3

Resistor - Emitter Base (R2) :

47 k Ω

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Element Configuration :

Single

Lead Free :

Lead Free

Base Part Number :

MUN51**T

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

hFE Min :

80

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

3

Factory Lead Time :

2 Weeks

Mounting Type :

Surface Mount

Package / Case :

SC-70, SOT-323

ECCN Code :

EAR99

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Number of Terminations :

3

Reference Standard :

AEC-Q101