SMUN2111T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

10 k Ω

Factory Lead Time :

8 Weeks

Transistor Type :

PNP - Pre-Biased

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

hFE Min :

35

Number of Terminations :

3

Max Power Dissipation :

230mW

Terminal Position :

Dual

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

Polarity :

PNP

Mounting Type :

Surface Mount

Number of Elements :

1

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

MUN2111

Terminal Form :

Gull wing

Pbfree Code :

yes

Resistor - Base (R1) :

10 k Ω

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Halogen Free :

Halogen Free

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pin Count :

3

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Application :

SWITCHING