SIJ484DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Threshold Voltage :

1.2V

Rise Time :

13ns

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Mount :

Surface Mount

Power Dissipation :

5W

REACH SVHC :

Unknown

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 10A, 10V

Power Dissipation-Max :

5W Ta 27.7W Tc

Published :

2011

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® SO-8

Turn On Delay Time :

22 ns

Continuous Drain Current (ID) :

35A

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

8

JESD-609 Code :

e3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

26 ns

Fall Time (Typ) :

12 ns

Series :

TrenchFET®