SIJ462DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Case Connection :

DRAIN

Rise Time :

10ns

Turn-Off Delay Time :

24 ns

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

20 mJ

Max Operating Temperature :

150°C

Number of Terminations :

4

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

31.2W

JESD-30 Code :

R-PSSO-G4

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Published :

2017

Package / Case :

PowerPAK® SO-8

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Number of Elements :

1

ECCN Code :

EAR99

Turn On Delay Time :

10 ns

Continuous Drain Current (ID) :

46.5A

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 30V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

46.5A Tc

Number of Pins :

8

Fall Time (Typ) :

8 ns

FET Type :

N-Channel