SIJ420DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Case Connection :

DRAIN

Continuous Drain Current (ID) :

50A

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

40 ns

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Fall Time (Typ) :

13 ns

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Package / Case :

PowerPAK® SO-8

JESD-30 Code :

R-PSSO-G4

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Position :

Single

Rise Time :

16ns

Nominal Vgs :

1.2 V

Power Dissipation :

4.8W

Drain Current-Max (Abs) (ID) :

32A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3630pF @ 10V

Turn On Delay Time :

29 ns

Avalanche Energy Rating (Eas) :

45 mJ

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0026Ohm

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Power Dissipation-Max :

4.8W Ta 62.5W Tc

Series :

TrenchFET®

Number of Pins :

8

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

1.2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 15A, 10V

Published :

2010