SIJ458DP-T1-GE3
- Mfr.Part #
- SIJ458DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 60A PPAK SO-8
- Stock
- 1,311
- In Stock :
- 1,311
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 20A, 10V
- REACH SVHC :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 4810pF @ 15V
- Power Dissipation-Max :
- 5W Ta 69.4W Tc
- Number of Channels :
- 1
- Drain Current-Max (Abs) (ID) :
- 35.5A
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- PowerPAK® SO-8
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 24 ns
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Threshold Voltage :
- 1V
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2010
- Series :
- TrenchFET®
- Nominal Vgs :
- 1 V
- Drain-source On Resistance-Max :
- 0.0022Ohm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G4
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 49 ns
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Pin Count :
- 8
- Power Dissipation :
- 5W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 30V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 122nC @ 10V
- Number of Elements :
- 1
- Rise Time :
- 44ns
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 30V
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 60A
- JESD-609 Code :
- e3
- Terminal Finish :
- MATTE TIN
- Turn On Delay Time :
- 38 ns
- Datasheets
- SIJ458DP-T1-GE3
N-Channel Tape & Reel (TR) 2.2m Ω @ 20A, 10V ±20V 4810pF @ 15V 122nC @ 10V 30V PowerPAK® SO-8
SIJ458DP-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4810pF @ 15V.This device has a continuous drain current (ID) of [60A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 35.5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 49 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 38 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SIJ458DP-T1-GE3 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 49 ns
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)
SIJ458DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIJ458DP-T1-GE3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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