SIJ482DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

PowerPAK® SO-8

Length :

5mm

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

72 ns

Power Dissipation-Max :

5W Ta 69.4W Tc

Resistance :

9.5MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

69.4W

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Height :

1.14mm

Number of Pins :

5

Turn On Delay Time :

28 ns

Current - Continuous Drain (Id) @ 25°C :

60A Tc

REACH SVHC :

Unknown

Mount :

Surface Mount, Through Hole

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 20A, 10V

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

60A

Drain to Source Breakdown Voltage :

80V

Number of Elements :

1

Element Configuration :

Single

Radiation Hardening :

No

Threshold Voltage :

1.5V

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2425pF @ 40V

Width :

4.47mm

RoHS Status :

ROHS3 Compliant