SIHW73N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

73A

Weight :

38.000013g

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Package / Case :

TO-247-3

Turn-Off Delay Time :

290 ns

Rise Time :

105ns

Published :

2013

Factory Lead Time :

19 Weeks

Power Dissipation-Max :

520W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

63 ns

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Terminations :

3

JEDEC-95 Code :

TO-247AD

Fall Time (Typ) :

120 ns

Radiation Hardening :

No

Element Configuration :

Single

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7700pF @ 100V

Packaging :

Tube

Number of Channels :

1

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

362nC @ 10V

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Rds On (Max) @ Id, Vgs :

39m Ω @ 36A, 10V