SIHW23N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2014

Rise Time :

38ns

JEDEC-95 Code :

TO-247AD

Drain to Source Voltage (Vdss) :

600V

Mount :

Through Hole

Power Dissipation-Max :

227W Tc

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Factory Lead Time :

19 Weeks

Turn On Delay Time :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Element Configuration :

Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

158m Ω @ 12A, 10V

Vgs (Max) :

±20V

Weight :

38.000013g

Input Capacitance (Ciss) (Max) @ Vds :

2418pF @ 100V

Continuous Drain Current (ID) :

23A

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Packaging :

Tube

Package / Case :

TO-247-3

Fall Time (Typ) :

34 ns

Turn-Off Delay Time :

66 ns

Number of Elements :

1

Drain to Source Breakdown Voltage :

650V

Number of Channels :

1