SIHW30N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

4V

Threshold Voltage :

2V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

65A

Weight :

38.000013g

Continuous Drain Current (ID) :

29A

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Number of Channels :

1

Power Dissipation-Max :

250W Tc

Rise Time :

65ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

29A Tc

FET Type :

N-Channel

REACH SVHC :

Unknown

Published :

2012

Turn-Off Delay Time :

95 ns

Drain to Source Breakdown Voltage :

600V

Avalanche Energy Rating (Eas) :

690 mJ

Mounting Type :

Through Hole

Radiation Hardening :

No

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

125m Ω @ 15A, 10V

Turn On Delay Time :

40 ns

Factory Lead Time :

19 Weeks

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AD

Fall Time (Typ) :

75 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 100V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-3P-3 Full Pack