SIHW47N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

65m Ω @ 24A, 10V

Number of Terminations :

3

Mount :

Through Hole

Vgs (Max) :

±30V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Fall Time (Typ) :

58 ns

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

4854pF @ 100V

Drain-source On Resistance-Max :

0.067Ohm

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

30 ns

DS Breakdown Voltage-Min :

600V

Element Configuration :

Single

Number of Elements :

1

Continuous Drain Current (ID) :

47A

RoHS Status :

ROHS3 Compliant

Rise Time :

61ns

Package / Case :

TO-247-3

Turn-Off Delay Time :

94 ns

Weight :

38.000013g

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-247AD

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation-Max :

379W Tc

Transistor Application :

SWITCHING

FET Type :

N-Channel