SIHW33N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Drain-source On Resistance-Max :

0.099Ohm

Transistor Application :

SWITCHING

Weight :

38.000013g

Threshold Voltage :

2V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Power Dissipation-Max :

278W Tc

Turn-Off Delay Time :

150 ns

Turn On Delay Time :

56 ns

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

600V

Element Configuration :

Single

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-3P-3 Full Pack

Radiation Hardening :

No

Fall Time (Typ) :

80 ns

Factory Lead Time :

19 Weeks

Gate to Source Voltage (Vgs) :

4V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Published :

2007

Rise Time :

90ns

JEDEC-95 Code :

TO-247AD

Mount :

Through Hole

FET Type :

N-Channel

Continuous Drain Current (ID) :

33A

Rds On (Max) @ Id, Vgs :

99m Ω @ 16.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3508pF @ 100V

Mounting Type :

Through Hole

Packaging :

Tube

Number of Terminations :

3

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

88A

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

Unknown

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)