SIHP8N50D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

29 mJ

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

527pF @ 100V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Length :

10.51mm

Turn On Delay Time :

13 ns

Factory Lead Time :

8 Weeks

Threshold Voltage :

3V

FET Type :

N-Channel

Mount :

Through Hole

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

8.7A

JEDEC-95 Code :

TO-220AB

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.85Ohm

Width :

4.65mm

Rds On (Max) @ Id, Vgs :

850m Ω @ 4A, 10V

Weight :

6.000006g

Transistor Application :

SWITCHING

Radiation Hardening :

No

Number of Channels :

1

DS Breakdown Voltage-Min :

500V

Power Dissipation :

156W

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Turn-Off Delay Time :

17 ns

Packaging :

Tube

Mounting Type :

Through Hole

Fall Time (Typ) :

11 ns

Transistor Element Material :

SILICON

Height :

9.01mm

Package / Case :

TO-220-3

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Contact Plating :

Tin

Number of Elements :

1

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

30V

Rise Time :

16ns

Power Dissipation-Max :

156W Tc

Operating Temperature :

-55°C~150°C TJ