SIHP11N80E-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Vishay

Supplier Device Package :

TO-220AB

Product Status :

Active

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

88 nC @ 10 V

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

Series :

E

Configuration :

Single

Packaging :

Tube

Product Category :

MOSFET

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation (Max) :

179W (Tc)

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Rise Time :

15 ns

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

440mOhm @ 5.5A, 10V

Drain to Source Voltage (Vdss) :

800 V

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Transistor Type :

1 N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1670 pF @ 100 V

Brand :

Vishay / Siliconix

FET Feature :

-

Package :

Tube

FET Type :

N-Channel

Vgs (Max) :

±30V

RoHS :

Details

Subcategory :

MOSFETs

Drive Voltage (Max Rds On, Min Rds On) :

10V