SIHP11N80E-GE3
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- Mfr.Part #
- SIHP11N80E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 12A TO220AB
- Stock
- 2,844
- In Stock ：
- 2,844
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 18 Weeks
- Power Dissipation-Max :
- 179W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 88nC @ 10V
- Series :
- E
- Rds On (Max) @ Id, Vgs :
- 440m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1670pF @ 100V
- Drain to Source Voltage (Vdss) :
- 800V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Package / Case :
- TO-220-3
- Datasheets
- SIHP11N80E-GE3
N-Channel Tube 440m Ω @ 5.5A, 10V ±30V 1670pF @ 100V 88nC @ 10V 800V TO-220-3
SIHP11N80E-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1670pF @ 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
SIHP11N80E-GE3 Features
a 800V drain to source voltage (Vdss)
SIHP11N80E-GE3 Applications
There are a lot of Vishay Siliconix
SIHP11N80E-GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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