SIHP10N40D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.6Ohm

Rise Time :

18ns

Power Dissipation-Max :

147W Tc

Width :

4.65mm

Number of Channels :

1

Mount :

Through Hole

Fall Time (Typ) :

14 ns

Turn-Off Delay Time :

18 ns

FET Type :

N-Channel

Height :

9.01mm

Continuous Drain Current (ID) :

10A

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

526pF @ 100V

Turn On Delay Time :

12 ns

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

3V

Weight :

6.000006g

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Number of Pins :

3

Transistor Element Material :

SILICON

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

600m Ω @ 5A, 10V

REACH SVHC :

Unknown

Length :

10.51mm

Number of Elements :

1

Factory Lead Time :

8 Weeks

Power Dissipation :

147W

Drain to Source Breakdown Voltage :

400V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V