SIHP12N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

500V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

REACH SVHC :

Unknown

Pulsed Drain Current-Max (IDM) :

28A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Number of Pins :

3

Resistance :

555mOhm

Element Configuration :

Single

FET Type :

N-Channel

Turn-Off Delay Time :

23 ns

Input Capacitance (Ciss) (Max) @ Vds :

1375pF @ 25V

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Radiation Hardening :

No

Case Connection :

DRAIN

Continuous Drain Current (ID) :

12A

Power Dissipation-Max :

208W Tc

Fall Time (Typ) :

6 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Threshold Voltage :

3V

Rise Time :

35ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Weight :

6.000006g

Turn On Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

555m Ω @ 4A, 10V

Power Dissipation :

208W

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Number of Channels :

1

Lead Free :

Lead Free

Published :

2007

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

40