SIHP10N40D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Turn-Off Delay Time :

18 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

526pF @ 100V

Weight :

6.000006g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

18ns

Drain-source On Resistance-Max :

0.6Ohm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

400V

Transistor Element Material :

SILICON

Packaging :

Tube

Number of Channels :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

13 Weeks

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

600m Ω @ 5A, 10V

Continuous Drain Current (ID) :

10A

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

5V

Turn On Delay Time :

12 ns

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Fall Time (Typ) :

14 ns

JEDEC-95 Code :

TO-220AB

Published :

2011

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

147W Tc

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Mounting Type :

Through Hole

Element Configuration :

Single

Radiation Hardening :

No