SIHP8N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

29 mJ

Number of Channels :

1

Rise Time :

16ns

Element Configuration :

Single

Turn-Off Delay Time :

17 ns

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

5V

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

527pF @ 100V

Power Dissipation-Max :

156W Tc

Packaging :

Tube

Turn On Delay Time :

13 ns

Number of Terminations :

3

Weight :

6.000006g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

500V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.85Ohm

Rds On (Max) @ Id, Vgs :

850m Ω @ 4A, 10V

Continuous Drain Current (ID) :

8.7A

Fall Time (Typ) :

11 ns

Number of Elements :

1

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Transistor Application :

SWITCHING